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| SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N60P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V Qg(typ.)= 32.5nC 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB7D5N60F1 UNIT KHB7D5N60P1 KHB7D5N60F2 600 30 7.5 ID 4.6 IDP EAS EAR dv/dt 147 PD 1.18 Tj Tstg 150 -55 150 0.38 W/ 30 230 14.7 4.5 48 4.6* 30* mJ mJ V/ns W Q 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KHB7D0N60F1 A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS V V 7.5* A K E O DIM B MILLIMETERS L M J R D N N H A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB7D0N60F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient RthJC RthCS RthJA 0.85 0.5 62.5 2.6 62.5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R D D N N D J PIN CONNECTION M H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB7D5N60P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.75A 600 2.0 0.7 1.0 10 4.0 100 1.2 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB7D5N60P1/F1/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 -55 C 150 C 10 0 10 0 25 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250 Fig4. RDS(ON) - ID 2.5 On - Resistance RDS(ON) () 2.0 1.5 VG = 10V 1.1 1.0 1.0 0.5 0 VG = 20V 0.9 0.8 -100 -50 0 50 100 150 0 5 10 15 20 25 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS =10V IDS = 3.75A Reverse Drain Current IS (A) Normalized On Resistance 10 1 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2007. 5. 10 Revision No : 0 3/7 KHB7D5N60P1/F1/F2 Fig7. C - VDS Gate - Source Voltage VGS (V) 2400 Frequency = 1MHz Fig8. Qg- VGS 12 10 8 6 4 2 0 0 5 10 15 20 25 30 ID=7.5A VDS = 120V VDS = 300V VDS = 480V Capacitance (pF) 2000 1600 1200 800 400 0 10-1 Ciss Coss Crss 100 101 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Fig10. Safe Operation Area (KHB7D5N60F1, KHB7D5N60F2) 10 2 Operation in this area is limited by RDS(ON) 10 s (KHB7D5N60P1) Operation in this area is limited by RDS(ON) 10s Drain Current ID (A) 101 100s 1ms Drain Current ID (A) 101 100s 1ms 100 10ms 100ms DC 10 0 10 ms 100 ms 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10 -1 DC 102 100 101 102 103 10-2 0 10 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 8 Drain Current ID (A) 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB7D5N60P1/F1/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 PDM 0.1 0.05 t1 t2 0.02 0.01 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB7D5N60P1/F1/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(off) td(on) ton tr toff tf 2007. 5. 10 Revision No : 0 6/7 KHB7D5N60P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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